MOSFET总览
PSMD099N10LS2
The PSMD099N10LS2 100 V N-Channel Enhancement Mode MOSFET is designed for high switching speed and low reverse transfer capacitance in a TO-252AA package. It sets the industry standard for high switching frequency requirements, making it ideal for battery-powered applications such as monitors and TV in consumer electronics. The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0 for environmentally friendly performance.
-
Package
TO-252AA
-
Voltage
100 V
-
Current
58 A
-
Transistor Polarity
N-Channel
-
Features
• RDS(ON)<9.9 mΩ at VGS=10 V, ID=32 A
• RDS(ON)<14 mΩ at VGS=4.5 V, ID=16 A
• High switching speed
• Low reverse transfer capacitance
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
-
Application
• Consumer Electronics
• Power Supply Unit (Monitor & TV)
Absolute Maximum Ratings (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 58 41 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 232 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 79 39 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=105 μA | 1.1 | 1.7 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V, ID=32 A VGS=4.5 V, ID=16 A |
- - |
8.5 10.6 |
9.9 14 |
mΩ |
| Zero Gate Voltage Drain Current | IDSS | VDS=100 V, VGS=0 V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±100 | nA |
| Transfer characteristics | gfs | VDS=10 V, ID=32 A | - | 67 | - | S |
| Dynamic Characteristics | ||||||
| Total Gate Charg | Qg | VDS=50 V, ID=32 A, VGS=4.5 V | - | 12 | - | nC |
| Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Plateau Voltage |
Qg Qgs Qgd Vplateau |
VDS=50 V, ID=32 A, VGS=10 V |
- - - - |
25 5.8 2.8 3 |
33 - - - |
nC V |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=50 V, VGS=0 V, f=250 kHz |
- - - |
1630 480 6 |
2120 630 - |
pF |
| Gate resistance | Rg | f=1 MHz | - | 0.75 | 1.5 | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=50 V, ID=32 A, VGS=10 V,RG=3 Ω |
- - - - |
6.7 2.4 14.6 2.8 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=32 A, VGS=0 V | - | 0.9 | 1.2 | V |