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MOSFET总览

PSMD460N15NS1

PSMD460N15NS1 is a 150V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with normal level gate drive in a TO-252AA package, it is ideal for applications such as SR solutions of PD charger, BMS and BLDC motor driver switch. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

  • Package

    TO-252AA

  • Voltage

    150V

  • Current

    22A

  • Transistor Polarity

    N-Channel

  • Applications

    ● SR solutions of PD Charger
    ● BLDC motor driver switch
    ● BMS

  • Features

    ● RDS(ON), VGS@10V, ID@20A<46mΩ
    ● RDS(ON), VGS@7V, ID@10A<60mΩ
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C
TC=100°C
ID 22
14
A
Pulsed Drain Current TC=25°C IDM 88 A
Power Dissipation TC=25°C
TC=100°C
PD 48
19
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C
Thermal Resistance
- Junction to Ambient
RθJA 55 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 150 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1.2 2.3 3.2 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=20A - 40.8 46
Drain-Source On-State Resistance RDS(on) VGS=7V, ID=10A - 41.2 60
Zero Gate Voltae Drain Current IDSS VDS=120V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - ±100 nA
Dynamic
Total Gate Charge Qg VDS=75V,ID=20A,VGS=7V - 15 - nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd

VDS=75V,ID=20A,VGS=10V
-
-
-
20
5.2
3.8
-
-
-

nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss

VDS=75V,VGS=0V,f=1.0kHZ
--
-
-
1315
127
23
-
-
-

pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
td(on)
tr
td(off)
tf

VDD=75V,ID=20A,VGS=10V,RG=2Ω
-
-
-
-
25
53
56
42
-
-
-
-

ns
Drain-Source Diode
Diode Forward Voltage VSD IS=20A,VGS=0V - 1 1.3 V
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