MOSFET总览
PSMQB550N10NS2
The PSMQB550N10NS2 100V N-Channel Enhancement Mode MOSFET optimizes to have high switching speed and low reverse transfer capacitance in a DFN3333-8L package. Specifically designed with 100% UIS / Rg test in mass productions for power sourcing equipment (PSE) and power over ethernet (PoE). The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
DFN3333-8L
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Voltage
100V
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Current
12A
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Transistor Polarity
N-Channel
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Features
● RDS(ON)<55 mΩ at VGS=10V, ID=8A
● RDS(ON)<78 mΩ at VGS=6V, ID=4A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
● 100% UIS / Rg test in mass production
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Applications
● PSE / POE
Absolute Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 12 8.8 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 48 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 18 9 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 62 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=23μA | 1.8 | 2.8 | 3.8 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=8A VGS=6V, ID=4A |
- - |
47 60 |
55 78 |
mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Transfer characteristics | gfs | VDS=10V, ID=8A | - | 11 | - | S |
| Dynamic | ||||||
| Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Plateau Voltage |
Qg Qgs Qgd Vplateau |
VDS=50V,ID=8A,VGS=10V |
- - - - |
4.6 1.6 0.8 4.5 |
6 - - - |
nC V |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=50V,VGS=0V,f=250kHz |
- - - |
250 150 5 |
325 195 - |
pF |
| Gate resistance | Rg | f=1MHz | - | 1.2 | 2.4 | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=50V,ID=8A,VGS=10V,RG=3.0Ω |
- - - - |
3.2 1.2 4.9 1.4 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=8A,VGS=0V | - | 0.9 | 1.2 | V |