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MOSFET总览

PSMQC094N10NS2

PSMQC094N10NS2 is a 100V N-Channel enhancement mode MOSFET. Designed with logic level gate drive in a DFN5060-8L package, it minimizes RDS(ON) and boasts an excellent figure of merit (FOM). Making it ideal for applications such as PD Charger, Adapter and Home Appliance. The product is green molding compound as per IEC 61249 standard and EU RoHS 2.0 compliant.

  • Package

    DFN5060-8L

  • Voltage

    100V

  • Current

    61A

  • Transistor Polarity

    N-Channel

  • Applications

    ● PD Charger
    ● Adapter
    ● Home Appliance

  • Features

    ● RDS(ON)< 9.4 mΩ at VGS=10V, ID =30A
    ● RDS(ON)< 15.6 mΩ at VGS=6V, ID =15A
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard
    ● 100% UIS / Rg test in mass production

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C ID 61 A
Continuous Drain Current TC=100°C ID 43 A
Pulsed Drain Current TC=25°C IDM 244 A
Power Dissipation TC=25°C PD 75 W
Power Dissipation TC=100°C PD 37.5 W
Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C
Thermal Resistance
- Junction to Ambient
RθJA 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 100 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=115uA 1.8 2.8 3.8 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=30A - 8.4 9.4
Drain-Source On-State Resistance RDS(on) VGS=6V, ID=15A - 11 15.6
Zero Gate Voltae Drain Current IDSS VDS=100V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 uA
Dynamic
Total Gate Charge Qg VDS=50V
ID=30A
VGS=10V
- 19 25 nC
Gate-Source Charge Qgs VDS=50V
ID=30A
VGS=10V
- 7.6 - nC
Gate-Drain Charge Qgd VDS=50V
ID=30A
VGS=10V
- 3.0 - nC
Input Capacitance Ciss VDS=50V
VGS=0V
f=250kHZ
- 1370 1780 pF
Output Capacitance Coss VDS=50V
VGS=0V
f=250kHZ
- 460 600 pF
Reverse Transfer Capacitance Crss VDS=50V
VGS=0V
f=250kHZ
- 10 - pF
Turn-On Delay Time td(on) VDD=50V
ID=30A
VGS=10V
RG=3.0Ω
- 6.2 - ns
Rise Time tr VDD=50V
ID=30A
VGS=10V
RG=3.0Ω
- 3.3 - ns
Turn-Off Delay Time td(off) VDD=50V
ID=30A
VGS=10V
RG=3.0Ω
- 10.4 - ns
Fall Time tf VDD=50V
ID=30A
VGS=10V
RG=3.0Ω
- 3.3 - ns
Drain-Source Diode
Diode Forward Voltage VSD IS=30A
VGS=0V
- 0.9 1.2 V
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