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MOSFET总览

PSMQC280N10LS2

PSMQC280N10LS2 is a 100V N-Channel enhancement mode MOSFET. The MOSFET is designed with logic level gate drive in a DFN5060-8L package. With low on−resistance (RDS(on)) and excellent figure of merit (FOM), it is ideal for PD Charger, Adapter and Home Appliance applications. The product is green molding compound as per IEC 61249 standard and EU RoHS 2.0 compliant.

  • Package

    DFN5060-8L

  • Voltage

    100V

  • Current

    21A

  • Transistor Polarity

    N-Channel

  • Applications

    ● PD Charger
    ● Adapter
    ● Home Appliance

  • Features

    ● RDS(ON) < 28 mΩ at VGS = 10 V, ID = 10 A
    ● RDS(ON) < 39 mΩ at VGS = 4.5 V, ID = 5 A
    ● High switching speed
    ● Low reverse transfer capacitance
    ● 100% UIS / Rg test in mass production

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (Note 4) ID 21 A
Pulsed Drain Current IDM 84 A
Power Dissipation TC=25°C PD 29.4 W
Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C
Typical Thermal Resistance
- Junction to Ambient
RθJA 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 100 - - V
Gate Threshold Voltage VGS(th> VDS=VGS, ID=37uA 1.1 1.7 2.3 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=10A - 24 28
Drain-Source On-State Resistance RDS(on) VGS=4.5V, ID=5A - 30 39
Zero Gate Voltae Drain Current IDSS VDS=100V, VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 uA
Dynamic
Total Gate Charge Qg VDS=50V
ID=10A
VGS=4.5V
- 4.4 - nC
Gate-Source Charge Qgs VDS=50V
ID=10A
VGS=10V
- 2.0 - nC
Gate-Drain Charge Qgd VDS=50V
ID=10A
VGS=10V
- 1.3 - nC
Input Capacitance Ciss VDS=50V
VGS=0V
f=250kHZ
- 525 680 pF
Output Capacitance Coss VDS=50V
VGS=0V
f=250kHZ
- 200 260 pF
Reverse Transfer Capacitance Crss VDS=50V
VGS=0V
f=250kHZ
- 7.5 - pF
Turn-On Delay Time td(on) VDS=50V
ID=5A
VGS=10V
RG=1.6Ω
- 3.0 - ns
Turn-On Rise Time tr VDS=50V
ID=5A
VGS=10V
RG=1.6Ω
- 2.2 - ns
Turn-Off Delay Time td(off) VDS=50V
ID=5A
VGS=10V
RG=1.6Ω
- 8.2 - ns
Turn-Off Fall Time tf VDS=50V
ID=5A
VGS=10V
RG=1.6Ω
- 1.6 - ns
Drain-Source Diode
Diode Forward Voltage VSD IS=10A
VGS=0V
- 0.9 1.2 V
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