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MOSFET总览

PSMQE093N10NS2

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The PSMQE093N10NS2 100 V N-Channel Enhancement Mode MOSFET features high-speed switching and low reverse transfer capacitance with a current rating of 54 A. It has been tested for 100% UIS and gate resistance (Rg) in a DFN3333S-8L package, making it ideal for DC/DC brick and server power in power supply applications. Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

  • Package

    DFN3333S-8L

  • Voltage

    100 V

  • Current

    54 A

  • Transistor Polarity

    N-Channel

  • Applications

    • DC/DC brick
    • Server Power

  • Features

    • RDS(ON) < 9.5 mΩ at VGS=10 V, ID=30 A
    • RDS(ON) < 15.0 mΩ at VGS=7 V, ID=15 A
    • High switching speed
    • Low reverse transfer capacitance
    • Lead free in compliance with EU RoHS 2.0
    • Green molding compound as per IEC 61249 standard
    • 100% UIS / Rg test in mass production

Absolute Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise specified)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C
TC=100°C
ID 54
38
A
Pulsed Drain Current TC=25°C IDM 218 A
Power Dissipation TC=25°C
TC=100°C
PD 60
30
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C
Typical Thermal Resistance
- Junction to Ambient
RθJA 60 °C/W

Electrical Characteristics (TA=25°C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static
Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250 μA 100 - - V
Gate Threshold Voltage VGS(th> VDS=VGS, ID=115 μA 1.8 2.8 3.8 V
Drain-Source On-State Resistance RDS(on) VGS=10 V, ID=30 A
VGS=7 V, ID=15 A
-
-
8.2
12
9.5
15
Zero Gate Voltae Drain Current IDSS VDS=100 V, VGS=0 V - - 1 μA
Gate-Source Leakage Current IGSS VGS=±20 V, VDS=0 V - - ±100 uA
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Plateau Voltage
Qg
Qgs
Qgd
Vplateau

VDS=50 V, ID=30 A, VGS=10 V
-
-
-
-
15.7
7.4
3.4
5.4
20.4
-
-
-

nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss

VDS=50 V, VGS=0 V, f=250 kHZ
-
-
-
1351
449
8
1756
584
-

pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf

VDD=50 V, ID=30 A, VGS=10 V, RG=3 Ω
-
-
-
-
8.6
2.9
12
3.3
-
-
-
-

ns
Gate Resistance Rg f=1.0 MHz - 1.1 2.3 Ω
Drain-Source Diode
Diode Forward Voltage VSD IS=30 A, VGS=0 V - 0.9 1.2 V
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