ツェナダイオード(Zener)
BZT52-B5V1
The BZT52-B2V4~BZT52-B75 Series consists of 2.4~75 V SURFACE-MOUNT SILICON ZENER DIODES with a power rating of 410 mW. Featuring planar die construction and low differential resistance, they are ideally suited for automated assembly processes and general regulation functions. Designed in a compact SOD-123 package, they are optimized for surface-mount designs. Additionally, the products are green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
SOD-123
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Power
410 mW
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Voltage
5.1 V
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Features
• Planar construction
• 410 mW Power dissipation
• Zener voltages from 2.4~75 V
• Ideally suited for automated assembly processes
• Lead free in compliance with EU RoHS2.0(2011/65/EU & 2015/865/EU directive)
• Green molding compound as per IEC61249 Std.(Halogen Free)
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Maximum Power Dissipation | PD | 410 | mW |
| Forward Voltage Drop at IF=10 mA | VF | 0.9 | V |
| Thermal Resistance -Junction to Ambient -Junction to Lead |
RθJA RθJL |
430 320 |
°C/W |
| Operating Junction Temperature and Storage Temperature Range | TJ | -55~150 | °C |
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
| PARAMETER | SYMBOL | Nom. | Min. | Max. | UNITS |
|---|---|---|---|---|---|
| Nominal Zener Voltage | VZ@IZT=5 mA | 5.1 | 5 | 5.2 | V |
| Max. Zener Impedance | ZZT@IZT=5 mA | - | - | 60 | Ω |
| Max ReverseLeakage Current | IR@VR=0.8 V | - | - | 0.1 | μA |