MOSFET概要
PJP75N06SA-AU
Active
PJP75N06SA-AU is a 60V N-Channel Enhancement Mode MOSFET, optimized to have excellent FOM and AEC-Q101 qualified with logic level gate drive. Specifically designed with an extremely efficient and reliable device for use in Automotive in a TO-220AB-L package. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
TO-220AB-L
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Voltage
60V
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Current
64A
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Transistor Polarity
N-Channel
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Features
● RDS(ON), VGS@10V, ID@20A<9mΩ
● RDS(ON), VGS@4.5V, ID@20A<17mΩ
● Excellent FOM
● Logic Level Drive
● AEC-Q101 qualified
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 64 46 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 232 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 75 38 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance | Junction to Case Junction to Ambient |
RθJC RθJA |
2 62.5 |
°C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.5 | 2.2 | 3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=20A VGS=4.5V, ID=20A |
- - |
7.2 13 |
9 17 |
mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=30V,ID=20A,VGS=10V |
- - - |
27 7 6 |
35 - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=30V,VGS=0V,f=1MHz |
- - - |
1454 616 54 |
1890 862 - |
pF |
| Gate resistance | Rg | f=1MHz | - | 1 | - | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDS=30V,ID=20A,VGS=10V,RG=3Ω |
- - - - |
7.8 28 22 50 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | - | 0.85 | 1.3 | V |