MOSFET概要
PSMD081N10LS2
The PSMD081N10LS2 100 V N-Channel Enhancement Mode MOSFET is designed for high switching speed and low reverse transfer capacitance in a TO-252AA package. It sets the industry standard for high switching frequency requirements, making it ideal for battery-powered applications such as monitors and TV in consumer electronics. The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0 for environmentally friendly performance.
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Package
TO-252AA
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Voltage
100 V
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Current
76 A
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Transistor Polarity
N-Channel
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Features
• RDS(ON)<8.2 mΩ at VGS=10 V, ID=35 A
• RDS(ON)<12.5 mΩ at VGS=4.5 V, ID=17.5 A
• High switching speed
• Low reverse transfer capacitance
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
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Application
• Consumer Electronics
• Power Supply Unit (Monitor & TV)
Absolute Maximum Ratings (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 76 54 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 304 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 100 50 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=135 μA | 1.1 | 1.7 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V, ID=35 A VGS=4.5 V, ID=17.5 A |
- - |
7.3 9.5 |
8.2 12.5 |
mΩ |
| Zero Gate Voltage Drain Current | IDSS | VDS=100 V, VGS=0 V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±100 | nA |
| Transfer characteristics | gfs | VDS=10 V, ID=35 A | - | 90 | - | S |
| Dynamic Characteristics | ||||||
| Total Gate Charg | Qg | VDS=50 V, ID=35 A, VGS=4.5 V | - | 14 | - | nC |
| Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Plateau Voltage |
Qg Qgs Qgd Vplateau |
VDS=50 V, ID=35 A, VGS=10 V |
- - - - |
28.5 5.5 3.8 3 |
37 - - - |
nC V |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=50 V, VGS=0 V, f=250 kHz |
- - - |
1770 610 12 |
2300 800 - |
pF |
| Gate resistance | Rg | f=1 MHz | - | 1.3 | 2.6 | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=50 V, ID=35 A, VGS=10 V,RG=3 Ω |
- - - - |
7.2 3.5 20 3.5 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=35 A, VGS=0 V | - | 0.9 | 1.2 | V |