MOSFET概要
PSMP033N10NS2
The PSMP033N10NS2 100 V N-Channel Enhancement Mode MOSFET is designed for high switching speed and low reverse transfer capacitance in a TO-220AB-L package. It sets the industry standard for high switching frequency requirements, making it ideal for battery-powered applications such as power tools, battery management systems and BLDC driver switch. The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0 for environmentally friendly performance.
-
Package
TO-220AB-L
-
Voltage
100 V
-
Current
219 A
-
Transistor Polarity
N-Channel
-
Features
• RDS(ON),max<3.3 mΩ at VGS=10 V, ID=64 A
• RDS(ON),max<4.7 mΩ at VGS=6 V, ID=32 A
• High switching speed
• Low reverse transfer capacitance
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
-
Application
• Power Supply Unit (Industrial & Medical)
• Battery Management System
• BLDC Driver Switch
Absolute Maximum Ratings (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 219 155 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 876 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 333 166 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 40 | °C/W |
Electrical Characteristics (TA = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=250 μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=440 μA | 1.8 | 2.8 | 3.8 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V,ID=64 A VGS=6 V, ID=32 A |
- - |
2.8 3.5 |
3.3 4.7 |
mΩ |
| Zero Gate Voltage Drain Current | IDSS | VDS=100 V, VGS=0 V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20 V, VDS=0 V | - | - | ±100 | nA |
| Transfer characteristics | gfs | VDS=10 V, ID=64 A | - | 120 | - | S |
| Dynamic Characteristics | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Plateau Voltage |
Qg Qgs Qgd Vplateau |
VDS=50 V,ID=64 A,VGS=10 V |
- - - - |
65 20 11 4.5 |
85 - - - |
nC V |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=50 V,VGS=0 V,f=250kHz |
- - - |
4710 1830 21 |
6120 2380 - |
pF |
| Gate resistance | Rg | f=1 MHz | - | 0.35 | 0.7 | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=50 V,ID=64 A,VGS=10 V,RG=3 Ω |
- - - - |
15.5 4.9 24.7 4.9 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=64 A, VGS=0V | - | 0.9 | 1.2 | V |