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MOSFET概要

PSMQB280N10LS2

The PSMQB280N10LS2 100V N-Channel Enhancement Mode MOSFET optimizes to have high switching speed and low reverse transfer capacitance in a DFN3333-8L package. Specifically designed with 100% UIS / Rg test in mass productions for LED headlight and power sourcing equipment (PSE). The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

  • Package

    DFN3333-8L

  • Voltage

    100V

  • Current

    22A

  • Transistor Polarity

    N-Channel

  • Features

    ● RDS(ON)<28 mΩ at VGS=10V, ID=10A
    ● RDS(ON)<39 mΩ at VGS=4.5V, ID=5A
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard
    ● 100% UIS / Rg test in mass production

  • Application

    ● LED Headlight
    ● PSE

Absolute Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise specified)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C
TC=100°C
ID 22
16
A
Pulsed Drain Current TC=25°C IDM 88 A
Power Dissipation TC=25°C
TC=100°C
PD 30.6
15.3
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C
Thermal Resistance
- Junction to Ambient
RθJA 60 °C/W

Electrical Characteristics (TA = 25°C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 100 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=37μA 1.1 1.7 2.3 V
Drain-Source On-State Resistance RDS(on) VGS=10V,ID=10A
VGS=4.5V, ID=5A
-
-
24
30
28
39
Zero Gate Voltae Drain Current IDSS VDS=100V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA
Transfer characteristics gfs VDS=10 V, ID=10A - 24 - S
Dynamic
Total Gate Charge Qg VDS=50V,ID=10A,VGS=4.5V - 4.4 - nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Plateau Voltage
Qg
Qgs
Qgd
Vplateau

VDS=50V,ID=10A,VGS=10V
-
-
-
-
9.2
2.2
1.1
3.3
12
-
-
-

nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss

VDS=50V,VGS=0V,f=250kHz
-
-
-
546
206
6.3
710
270
-

pF
Gate resistance Rg f=1MHz - 1.05 2.1 Ω
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
td(on)
tr
td(off)
tf

VDD=50V,ID=5A,VGS=10V,RG=1.6Ω
-
-
-
-
3.7
1.6
9.6
2.2
-
-
-
-

ns
Drain-Source Diode
Diode Forward Voltage VSD IS=10A,VGS=0V - 0.9 1.2 V
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