戻る

MOSFET概要

PSMQB550N10NS2

The PSMQB550N10NS2 100V N-Channel Enhancement Mode MOSFET optimizes to have high switching speed and low reverse transfer capacitance in a DFN3333-8L package. Specifically designed with 100% UIS / Rg test in mass productions for power sourcing equipment (PSE) and power over ethernet (PoE). The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

  • Package

    DFN3333-8L

  • Voltage

    100V

  • Current

    12A

  • Transistor Polarity

    N-Channel

  • Features

    ● RDS(ON)<55 mΩ at VGS=10V, ID=8A
    ● RDS(ON)<78 mΩ at VGS=6V, ID=4A
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard
    ● 100% UIS / Rg test in mass production

  • Applications

    ● PSE / POE

Absolute Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise specified)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C
TC=100°C
ID 12
8.8
A
Pulsed Drain Current TC=25°C IDM 48 A
Power Dissipation TC=25°C
TC=100°C
PD 18
9
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C
Thermal Resistance
- Junction to Ambient
RθJA 62 °C/W

Electrical Characteristics (TA = 25°C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 100 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=23μA 1.8 2.8 3.8 V
Drain-Source On-State Resistance RDS(on) VGS=10V,ID=8A
VGS=6V, ID=4A
-
-
47
60
55
78
Zero Gate Voltae Drain Current IDSS VDS=100V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA
Transfer characteristics gfs VDS=10V, ID=8A - 11 - S
Dynamic
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Plateau Voltage
Qg
Qgs
Qgd
Vplateau

VDS=50V,ID=8A,VGS=10V
-
-
-
-
4.6
1.6
0.8
4.5
6
-
-
-

nC

V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss

VDS=50V,VGS=0V,f=250kHz
-
-
-
250
150
5
325
195
-

pF
Gate resistance Rg f=1MHz - 1.2 2.4 Ω
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
td(on)
tr
td(off)
tf

VDD=50V,ID=8A,VGS=10V,RG=3.0Ω
-
-
-
-
3.2
1.2
4.9
1.4
-
-
-
-

ns
Drain-Source Diode
Diode Forward Voltage VSD IS=8A,VGS=0V - 0.9 1.2 V
お問い合わせリストを作成しますか?

この商品をお問い合わせリストに追加してもよろしいですか?