MOSFET概要
PSMQC039N10NS2
PSMQC039N10NS2 is a 100V N-Channel Enhancement Mode MOSFET, optimized to have high switching speed and low reverse transfer capacitance in a DFN5060X-8L Package. It's ideal for usage in SR solutions of PD Charger, Brick Power and 48V DC/DC converter. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
DFN5060X-8L
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Voltage
100V
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Current
126A
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Transistor Polarity
N-Channel
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Features
● RDS(ON),max < 3.9 mΩ at VGS = 10 V, ID = 60 A
● RDS(ON),max < 5.9 mΩ at VGS = 6 V, ID = 30 A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
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Application
● SR solutions of PD Charger
● Brick Power
● 48V DC/DC converter
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 126 89 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 504 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 125 62.5 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=300μA | 1.8 | 2.8 | 3.8 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=60A VGS=6V, ID=30A |
- - |
3.5 4.5 |
3.9 5.9 |
mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 2 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=50V,ID=60A,VGS=10V |
- - - |
46 16 7 |
60 - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=50V,VGS=0V,f=250kHz |
- - - |
3110 1220 19 |
4040 1590 - |
pF |
| Gate resistance | Rg | f=1MHz | - | 0.4 | 0.8 | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=50V,ID=60A,VGS=10V,RG=1.8Ω |
- - - - |
15.3 8.7 24 5.4 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=60A,VGS=0V | - | 0.9 | 1.2 | V |