MOSFET概要
PSMQC040N08NS2
PSMQC040N08NS2 is an 80V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with logic level gate drive in a DFN5060-8L package, it is ideal for applications such as SR of Industrial Power, Brick Power, 48V DC/DC converter. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
-
Package
DFN5060-8L
-
Voltage
80V
-
Current
102A
-
Transistor Polarity
N-Channel
-
Applications
● SR of Industrial Power
● Brick Power
● 48V DC/DC converter
-
Features
● RDS(ON) < 4.0 mΩ at VGS = 10 V, ID = 50 A
● RDS(ON) < 7.0 mΩ at VGS = 6 V, ID = 25 A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 80 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C | ID | 102 | A |
| Continuous Drain Current | TC=100°C | ID | 72 | A |
| Pulsed Drain Current | TC=25°C | IDM | 408 | A |
| Power Dissipation | TC=25°C | PD | 83 | W |
| Power Dissipation | TC=100°C | PD | 41 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 80 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=200μA | 1.8 | 2.8 | 3.8 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=50A | - | 3.3 | 4.0 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=6V, ID=25A | - | 4.5 | 7.0 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=80V, VGS=0V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=40V ID=50A VGS=10V |
- | 36 | 47 | nC |
| Gate-Source Charge | Qgs | VDS=40V ID=50A VGS=10V |
- | 11 | - | nC |
| Gate-Drain Charge | Qgd | VDS=40V ID=50A VGS=10V |
- | 8 | - | nC |
| Input Capacitance | Ciss | VDS=40V VGS=0V f=250kHZ |
- | 2300 | 2990 | pF |
| Output Capacitance | Coss | VDS=40V VGS=0V f=250kHZ |
- | 1010 | 1310 | pF |
| Reverse Transfer Capacitance | Crss | VDS=40V VGS=0V f=250kHZ |
- | 33 | - | pF |
| Turn-On Delay Time | td(on) | VDD=40V ID=50A VGS=10V RG=3.0Ω |
- | 7.6 | - | ns |
| Rise Time | tr | VDD=40V ID=50A VGS=10V RG=3.0Ω |
- | 6.3 | - | ns |
| Turn-Off Delay Time | td(off) | VDD=40V ID=50A VGS=10V RG=3.0Ω |
- | 17 | - | ns |
| Fall Time | tf | VDD=40V ID=50A VGS=10V RG=3.0Ω |
- | 7.1 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=50A VGS=0V |
- | 0.9 | 1.2 | V |