MOSFET概要
PSMQC042N10LS2
PSMQC042N10LS2 is a 100V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with logic level gate drive in a DFN5060X-8L package, it is ideal for applications such as PD chargers, Adapter and home appliances. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
DFN5060X-8L
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Voltage
100V
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Current
109A
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Transistor Polarity
N-Channel
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Applications
● PD Charger
● Adapter
● Home Appliance
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Features
● RDS(ON) < 4.2 mΩ at VGS = 10 V, ,ID = 50 A
● RDS(ON) < 6.0 mΩ at VGS = 4.5 V, ,ID = 25 A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
● 100% UIS / Rg test in mass production
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C | ID | 109 | A |
| Continuous Drain Current | TC=100°C | ID | 77 | A |
| Pulsed Drain Current | TC=25°C | IDM | 448 | A |
| Power Dissipation | TC=25°C | PD | 115 | W |
| Power Dissipation | TC=100°C | PD | 57 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=270μA | 1.1 | 1.7 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=50A | - | 3.6 | 4.2 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=25A | - | 4.6 | 60 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=50V ID=50A VGS=4.5V |
- | 27 | - | nC |
| Total Gate Charge | Qg | VDS=50V ID=50A VGS=10V |
- | 58 | 76 | nC |
| Gate-Source Charge | Qgs | VDS=50V ID=50A VGS=10V |
- | 12.2 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V ID=50A VGS=10V |
- | 7.2 | - | nC |
| Input Capacitance | Ciss | VDS=50V VGS=0V f=250kHZ |
- | 3800 | 4940 | pF |
| Output Capacitance | Coss | VDS=50V VGS=0V f=250kHZ |
- | 1050 | 1365 | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V VGS=0V f=250kHZ |
- | 16 | - | pF |
| Turn-On Delay Time | td(on) | VDD=50V ID=50A VGS=10V RG=3.0Ω |
- | 9.6 | - | ns |
| Rise Time | tr | VDD=50V ID=50A VGS=10V RG=3.0Ω |
- | 6.2 | - | ns |
| Turn-Off Delay Time | td(off) | VDD=50V ID=50A VGS=10V RG=3.0Ω |
- | 31 | - | ns |
| Fall Time | tf | VDD=50V ID=50A VGS=10V RG=3.0Ω |
- | 4.8 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=50A VGS=0V |
- | 0.9 | 1.2 | V |