MOSFET概要
PSMQC076N12LS1
PSMQC076N12LS1 is 115V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with logical level gate drive in a DFN5060X-8L package, it is ideal for applications such as SR solutions of travel adapter, PD charger, gaming adapter. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
DFN5060X-8L
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Voltage
115V
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Current
91.4A
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Transistor Polarity
N-Channel
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Applications
● SR solutions of Travel Adapter
● PD Charger
● Gaming Adapter
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Features
● RDS(ON), VGS@10V, ID@20A<7.6mΩ
● RDS(ON), VGS@4.5V, ID@10A<11mΩ
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 115 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 91.4 57.8 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 365 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 125 50 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 115 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 1.2 | 1.7 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=20A | - | 6.1 | 7.6 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=10A | - | 8.4 | 11 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=115V,GS=0V | - | - | 100 | μA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=60V,ID=50A,VGS=10V |
- - - |
77 15.9 16.9 |
105 - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=60V,VGS=0V,f=1.0kHZ |
-- - - |
4740 338 36 |
- - - |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=60V,ID=50A,VGS=10V,RG=6Ω |
- - - - |
34 111 116 119 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=1A,VGS=0V | - | 0.68 | 1 | V |