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MOSFET概要

PSMQC078N10LS2

PSMQC078N10LS2 is a 100V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with logic level gate drive in a DFN5060-8L package, it is ideal for applications such as PD chargers, Adapter and home appliances. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

  • Package

    DFN5060-8L

  • Voltage

    100V

  • Current

    66A

  • Transistor Polarity

    N-Channel

  • Applications

    ● PD Charger
    ● Adapter
    ● Home Appliance

  • Features

    ● RDS(ON) < 7.8 mΩ at VGS = 10 V, ID = 35 A
    ● RDS(ON) < 11.5 mΩ at VGS = 4.5 V, ID = 17.5 A
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard
    ● 100% UIS / Rg test in mass production

Download

    • PANJIT MV and SJ MOSFET_AN-PJ1003
      File format pdf

    • PANJIT_MV SG MOSFET_Flyer
      File format pdf

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C ID 66 A
Continuous Drain Current TC=100°C ID 47 A
Pulsed Drain Current TC=25°C IDM 256 A
Power Dissipation TC=25°C PD 65 W
Power Dissipation TC=100°C PD 26 W
Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C
Thermal Resistance
- Junction to Ambient
RθJA 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 100 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=135μA 1.1 1.7 2.3 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=35A - 6.8 7.8
Drain-Source On-State Resistance RDS(on) VGS=4.5V, ID=17.5A - 8.7 11.5
Zero Gate Voltae Drain Current IDSS VDS=100V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA
Dynamic
Total Gate Charge Qg VDS=50V
ID=35A
VGS=4.5V
- 14 - nC
Total Gate Charge Qg VDS=50V
ID=35A
VGS=10V
- 30 39 nC
Gate-Source Charge Qgs VDS=50V
ID=35A
VGS=10V
- 6.7 - nC
Gate-Drain Charge Qgd VDS=50V
ID=35A
VGS=10V
- 3.5 - nC
Input Capacitance Ciss VDS=50V
VGS=0V
f=250kHZ
- 1970 2560 pF
Output Capacitance Coss VDS=50V
VGS=0V
f=250kHZ
- 530 690 pF
Reverse Transfer Capacitance Crss VDS=50V
VGS=0V
f=250kHZ
- 10 - pF
Turn-On Delay Time td(on) VDD=50V
ID=35A
VGS=10V
RG=3.0Ω
- 6.2 - ns
Rise Time tr VDD=50V
ID=35A
VGS=10V
RG=3.0Ω
- 5.6 - ns
Turn-Off Delay Time td(off) VDD=50V
ID=35A
VGS=10V
RG=3.0Ω
- 18 - ns
Fall Time tf VDD=50V
ID=35A
VGS=10V
RG=3.0Ω
- 4.4 - ns
Drain-Source Diode
Diode Forward Voltage VSD IS=35A
VGS=0V
- 0.9 1.2 V
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