MOSFET概要
PSMQC144N10LS2
PSMQC144N10LS2 is a 100V N-Channel Enhancement Mode MOSFET, optimized to have high switching speed and low reverse transfer capacitance in a DFN5060-8L Package. It's ideal for usage in LED Lighting / Home Appliance. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
-
Package
DFN5060-8L
-
Voltage
100V
-
Current
38A
-
Transistor Polarity
N-Channel
-
Features
● RDS(ON) < 14.4 mΩ at VGS = 10 V, ID = 20 A
● RDS(ON) < 22 mΩ at VGS = 4.5 V, ID = 10 A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
● 100% UIS / Rg test in mass production
-
Application
● LED Lighting
● Home Appliance
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 38 27 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 152 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 50 25 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=80μA | 1.1 | 1.7 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=20A VGS=4.5V, ID=10A |
- - |
12.5 15.5 |
14.4 22 |
mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=50V,ID=20A,VGS=4.5V | - | 8.7 | - | nC |
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=50V,ID=20A,VGS=10V |
- - - |
16.7 3.9 2.4 |
21.7 - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=50V,VGS=0V,f=250kHz |
- - - |
1150 370 8.5 |
1500 480 - |
pF |
| Gate resistance | Rg | f=1MHz | - | 0.9 | 1.8 | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=50V,ID=20A,VGS=10V,RG=3.0Ω |
- - - - |
5.4 2.1 13.1 2.3 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | - | 0.9 | 1.2 | V |