MOSFET概要
PSMQC280N10LS2
PSMQC280N10LS2 is a 100V N-Channel enhancement mode MOSFET. The MOSFET is designed with logic level gate drive in a DFN5060-8L package. With low on−resistance (RDS(on)) and excellent figure of merit (FOM), it is ideal for PD Charger, Adapter and Home Appliance applications. The product is green molding compound as per IEC 61249 standard and EU RoHS 2.0 compliant.
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Package
DFN5060-8L
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Voltage
100V
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Current
21A
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Transistor Polarity
N-Channel
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Applications
● PD Charger
● Adapter
● Home Appliance
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Features
● RDS(ON) < 28 mΩ at VGS = 10 V, ID = 10 A
● RDS(ON) < 39 mΩ at VGS = 4.5 V, ID = 5 A
● High switching speed
● Low reverse transfer capacitance
● 100% UIS / Rg test in mass production
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (Note 4) | ID | 21 | A | |
| Pulsed Drain Current | IDM | 84 | A | |
| Power Dissipation | TC=25°C | PD | 29.4 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Typical Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th> | VDS=VGS, ID=37uA | 1.1 | 1.7 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=10A | - | 24 | 28 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=5A | - | 30 | 39 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | uA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=50V ID=10A VGS=4.5V |
- | 4.4 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V ID=10A VGS=10V |
- | 2.0 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V ID=10A VGS=10V |
- | 1.3 | - | nC |
| Input Capacitance | Ciss | VDS=50V VGS=0V f=250kHZ |
- | 525 | 680 | pF |
| Output Capacitance | Coss | VDS=50V VGS=0V f=250kHZ |
- | 200 | 260 | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V VGS=0V f=250kHZ |
- | 7.5 | - | pF |
| Turn-On Delay Time | td(on) | VDS=50V ID=5A VGS=10V RG=1.6Ω |
- | 3.0 | - | ns |
| Turn-On Rise Time | tr | VDS=50V ID=5A VGS=10V RG=1.6Ω |
- | 2.2 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=50V ID=5A VGS=10V RG=1.6Ω |
- | 8.2 | - | ns |
| Turn-Off Fall Time | tf | VDS=50V ID=5A VGS=10V RG=1.6Ω |
- | 1.6 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=10A VGS=0V |
- | 0.9 | 1.2 | V |