SiC Diodes (VRRM = 650 - 1200V, IF = 2 - 40A)
PCDP20120GB
The PCDP20120GB 1200V Silicon Carbide (SiC) Schottky Barrier Diode with competitive VF 1.4V at rated current. It has excellent reverse leakage stability at high temperatures and high surge current capability in a TO-220AC package. And it is used for EV Charging Piles, UPS and PV Inverters in automotive, power supply and industrial applications. The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
TO-220AC
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Voltage
1200V
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Current
20A
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VF(Typ.)
1.4 V
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Features
● Temperature Independent Switching Behavior
● High Surge Current Capability
● Competitive VF 1.4V at rated current
● Low Conduction Loss
● Zero Reverse Recovery
● High junction temperature 175 °C
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
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Applications
● EV Charging Pile
● Uninterruptible Power Supply (UPS)
● PV Inverter
Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | |
| DC Blocking Voltage | VDC | 1200 | V | |
| Continuous Forward Current | TC=160°C | IF | 20 | A |
| Repetitive Peak Surge Current Half Sine Wave, D=0.1 |
TC=25°C, tP=10ms TC=125°C, tP=10ms |
IFRM | 88 65 |
A |
| Peak Forward Surge Current Half Sine Wave |
TC=25°C, tP=10ms TC=125°C, tP=10ms |
IFSM | 166 144 |
A |
| Peak Forward Surge Current tp=10us, Pulse |
IFSM | 888 | A | |
| Maximum Power Dissipation | Ptotal | 381 | W | |
| Operating Junction Temperature Range, Storage Temperature Range | TJ, TSTG | -55~175 | °C |
Electrical Characteristics (TC = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Forward Voltage Drop | VF | IF=20A, TJ=25°C IF=20A, TJ=175°C |
- - |
1.4 1.9 |
1.7 - |
V |
| Reverse Leakage Current | IR | VR=1200V, TJ=25°C VR=1200V, TJ=175°C |
- - |
1 6 |
60 - |
μA |
| Total Capacitive Charge | QC | VR=800V | - | 115 | - | nC |
| Total Capacitance | C |
VR=1V, f=1MHz VR=400V, f=1MHz VR=800V, f=1MHz |
- - - |
1298 113 84 |
- - - |
pF |
| Capacitance Stored Energy | EC | VR=800V | - | 35 | - | μJ |
| Thermal Resistance | RθJC | - | 0.39 | - | °C/W |