MOSFET Overview
PJMH042N60FRC
New Product
The PJMH042N60FRC 600V N-Channel Super Junction MOSFET features fast recovery Qrr/Trr performance and high switching speed. It has been tested for avalanche and gate resistance (Rg) in a TO-247AD-3LD package. This series is ideally suited for soft switching topologies, such as LLC and PSFB, allowing us to offer 1kW to 20kW solutions in industrial applications, power supplies and communication devices. The product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
TO-247AD-3LD
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Voltage
600V
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Rdson
42mΩ
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Current
69A
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Transistor Polarity
N-Channel
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Features
● RDS(ON) Max, VGS@10V: 42mΩ
● Fast recovery Qrr/Trr performance
● High Speed Switching and Low RDS(ON)
● 100% Avalanche Tested
● 100% Rg Tested
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
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Applications
● Server Power
● PV Inverter
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 600 | V | |
| Gate-Source Voltage | VGS | ±30 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 69 43 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 223 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 500 200 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| PARAMETER | SYMBOL | MAXIMUM | UNITS | |
| Thermal Resistance | Junction-to-Case Junction to Ambient |
RθJC RθJA |
0.25 50 |
°C/W |
Electrical Characteristics (TA = 25°C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 600 | 710 | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 4.3 | 4.8 | 5.8 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=40.5A | - | 36 | 42 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=600V, VGS=0V | - | - | 10 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±30V, VDS=0V | - | - | ±100 | nA |
| Transfer characteristics | gfs | VDS=20V, ID=40.5A | - | 73 | - | S |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=480V,ID=40.5A,VGS=10V |
- - - |
145 52 58 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=400V,VGS=0V,f=100kHz |
- - - |
7400 170 2 |
- - - |
pF |
| Gate resistance | Rg | f=1MHz | - | 13 | - | Ω |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=300V,ID=40.5A,VGS=10V,RG=25Ω |
- - - - |
248 89 412 105 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=40.5A,VGS=0V | - | 0.9 | 1.5 | V |