*********************************************************************** *********** PANJIT International Inc. *********** *********************************************************************** *Jul 30, 2024 * * * *This SPICE Model describes the characteristics of a typical device * *and does not respresent the specification. Designer should refer to * *the same type name data sheet for specification limits. * *********************************************************************** *$ .subckt PSMB033N10NS2 drain gate source Lg gate g1 2.2n Ld drain d1 100p Ls source s1 350p Rs s1 s2 205u TC=3m Rg g1 g2 0.353 M1 d2 g2 s2 s2 DMOS L=1u W=1u .MODEL DMOS NMOS ( KP=393.2 VTO=3.73 LEVEL=3 VMAX=1e5 ETA=0.006 nfs=4.605e11 gamma=1.81) Rd d1 d2 2.285e-3 TC=5.54e-3,1.5e-5 Dbd s2 d2 Dbt .MODEL Dbt D(BV=110 TBV1=4.105e-4 TBV2=6.055e-8 CJO=4.577e-9 M=4.647e-1 VJ=8.087) Dbody s2 21 DBODY .MODEL DBODY D(IS=1.04e-11 N=1.022 RS=4e-8 EG=1.1 TT=20n ikf=9 tikf=1e-6) Rdiode d1 21 9.92e-4 TC=2.5e-3 .MODEL sw NMOS(VTO=0 KP=10 LEVEL=1) Maux g2 c a a sw Maux2 b d g2 g2 sw Eaux c a d2 g2 1 Eaux2 d g2 d2 g2 -1 Cox b d2 8.768e-10 .MODEL DGD D(M=5.758e-1 CJO=8.632e-10 VJ=6.937e-1) Rpar b d2 10Meg Dgd a d2 DGD Rpar2 d2 a 10Meg Cgs g2 s2 4.689e-9 .ENDS PSMB033N10NS2 *$