*********************************************************************** *********** PANJIT International Inc. *********** *********************************************************************** *Apr 29, 2024 * * * *This SPICE Model describes the characteristics of a typical device * *and does not respresent the specification. Designer should refer to * *the same type name data sheet for specification limits. * *********************************************************************** *$ .subckt PJQ4576AP-AU drain gate source Lg gate g1 2.2n Ld drain d1 100p Ls source s1 350p Rs s1 s2 205u TC=3m Rg g1 g2 1.43 M1 d2 g2 s2 s2 DMOS L=1u W=1u .MODEL DMOS NMOS ( KP=67 VTO=2.59 LEVEL=3 VMAX=1e5 ETA=0.006 nfs=8.5e9 gamma=1.32 ) Rd d1 d2 11.75m TC=6.19m,1.71e-5 Dbd s2 d2 Dbt .MODEL Dbt D(BV=110 TBV1=4.855e-4 TBV2=-5.2e-7 CJO=8.86e-10 M=1.96 VJ=58.186) Dbody s2 21 DBODY .MODEL DBODY D(IS=1.67e-14 N=0.849 RS=12.04u EG=1.13 TT=20n ikf=0.568) Rdiode d1 21 2.96e-3 TC=2.05m .MODEL sw NMOS(VTO=0 KP=10 LEVEL=1) Maux g2 c a a sw Maux2 b d g2 g2 sw Eaux c a d2 g2 1 Eaux2 d g2 d2 g2 -1 Cox b d2 5.519e-10 .MODEL DGD D(M=1.675 CJO=5.398e-10 VJ=8.215) Rpar b d2 10Meg Dgd a d2 DGD Rpar2 d2 a 10Meg Cgs g2 s2 6.053e-10 .ENDS *$