中压MOSFET (60 - 200V , Rds(on) < 1Ω)

PSMQC039N10NS2

Name: 強茂股份有限公司
Address: 岡山北路24號 No.24, Gangshan N. Rd., 高雄市 Kaohsiung City, 岡山區 Gangshan Dist., 82063, 台灣 Taiwan
Telephone: 886-7-621-3121
Price range: -

Package

DFN5060X-8L
Voltage

100V
Current

126A
Transistor Polarity

N-Channel

Features

● R_DS(ON),max < 3.9 mΩ at V_GS = 10 V, I_D = 60 A
● R_DS(ON),max < 5.9 mΩ at V_GS = 6 V, I_D = 30 A
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard

Application

● SR solutions of PD Charger
● Brick Power
● 48V DC/DC converter

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CAD Models

Maximum Ratings and Thermal Characteristics (T_A = 25°C unless otherwise noted)

PARAMETER		SYMBOL	LIMIT	UNITS
Drain-Source Voltage		V_DS	100	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current	T_C=25°C T_C=100°C	I_D	126 89	A
Pulsed Drain Current	T_C=25°C	I_DM	504	A
Power Dissipation	T_C=25°C T_C=100°C	P_D	125 62.5	W
Operating Junction and Storage Temperature Range		T_J, T_STG	-55~175	°C
Thermal Resistance - Junction to Ambient		R_θJA	50	°C/W

Electrical Characteristics (T_A = 25°C unless otherwise noted)

PARAMETER	SYMBOL	TEST CONDITION	MIN.	TYP.	MAX.	UNITS
Static Characteristics
Drain-Source Breakdown Voltage	BV_DSS	V_GS=0V, I_D=250μA	100	-	-	V
Gate Threshold Voltage	V_GS(th)	V_DS=V_GS, I_D=300μA	1.8	2.8	3.8	V
Drain-Source On-State Resistance	R_DS(on)	V_GS=10V,I_D=60A V_GS=6V, I_D=30A	- -	3.5 4.5	3.9 5.9	mΩ
Zero Gate Voltae Drain Current	I_DSS	V_DS=100V, V_GS=0V	-	-	2	μA
Gate-Source Leakage Current	I_GSS	V_GS=±20V, V_DS=0V	-	-	±100	nA
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge	Q_g Q_gs Q_gd	V_DS=50V,I_D=60A,V_GS=10V	- - -	46 16 7	60 - -	nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance	Ciss Coss Crss	V_DS=50V,V_GS=0V,f=250kHz	- - -	3110 1220 19	4040 1590 -	pF
Gate resistance	R_g	f=1MHz	-	0.4	0.8	Ω
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time	td_(on) tr td_(off) tf	V_DD=50V,I_D=60A,V_GS=10V,R_G=1.8Ω	- - - -	15.3 8.7 24 5.4	- - - -	ns
Drain-Source Diode
Diode Forward Voltage	V_SD	I_S=60A,V_GS=0V	-	0.9	1.2	V

PSMQC039N10NS2

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Maximum Ratings and Thermal Characteristics (T_A = 25°C unless otherwise noted)

Electrical Characteristics (T_A = 25°C unless otherwise noted)