車用MOSFET總覽
PJQ4576AP-AU
Active
PJQ4576AP-AU is a 100V N-Channel enhancement mode logic level MOSFET with AEC-Q101 qualification. The MOSFET is assembled in a DFN3333-8L package. With low on−resistance (RDS(on)) and excellent figure of merit (FOM), it is ideal for Ideal for high-frequency switching automotive applications. The product is Pb-free and EU RoHS 2.0 compliant.
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Package
DFN3333-8L
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Voltage
100V
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Current
35A
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Transistor Polarity
N-Channel
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Features
● AEC-Q101 qualified
● Low RDS(ON): VGS@10V, ID@10A<17mΩ / VGS@4.5V, ID@6A<26.5mΩ
● Excellent FOM to minimize driver losses
● Lead-free in compliance with EU RoHS 2.0 standard
● Halogen-free in compliance with IEC 61249 standard
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Applications
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 35 | A | |
| Pulsed Drain Current | IDM | 140 | A | |
| Power Dissipation | TA=25°C | PD | 42 | W |
| Power Dissipation | TA=70°C | PD | 580 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Typical Thermal Resistance - Junction to Ambient |
RθJA | 60 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th> | VDS=VGS, ID=250uA | 1.5 | 2 | 3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=10A | - | 13.7 | 17 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=6A | - | 20.4 | 26.5 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=50V ID=10A VGS=10V |
- | 23 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V ID=10A VGS=10V |
- | 5.1 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V ID=10A VGS=10V |
- | 6.1 | - | nC |
| Input Capacitance | Ciss | VDS=50V VGS=0V f=1.0MHZ |
- | 1009 | - | pF |
| Output Capacitance | Coss | VDS=50V VGS=0V f=1.0MHZ |
- | 173 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V VGS=0V f=1.0MHZ |
- | 23 | - | pF |
| Turn-On Delay Time | td(on) | VDS=50V ID=10A VGS=10V RG=3Ω |
- | 7.1 | - | ns |
| Turn-On Rise Time | tr | VDS=50V ID=10A VGS=10V RG=3Ω |
- | 14 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=50V ID=10A VGS=10V RG=3Ω |
- | 20 | - | ns |
| Turn-Off Fall Time | tf | VDS=50V ID=10A VGS=10V RG=3Ω |
- | 16 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Current | IS | --- | - | - | 35 | A |
| Diode Forward Voltage | VSD | IS=1A VGS=0V |
- | 0.7 | 1.3 | V |