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PSMQC076N12LS1

PSMQC076N12LS1 is 115V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with logical level gate drive in a DFN5060X-8L package, it is ideal for applications such as SR solutions of travel adapter, PD charger, gaming adapter. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

  • Package

    DFN5060X-8L

  • Voltage

    115V

  • Current

    91.4A

  • Transistor Polarity

    N-Channel

  • Applications

    ● SR solutions of Travel Adapter
    ● PD Charger
    ● Gaming Adapter

  • Features

    ● RDS(ON), VGS@10V, ID@20A<7.6mΩ
    ● RDS(ON), VGS@4.5V, ID@10A<11mΩ
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard

Download

  • 產品文宣
    • Flyer_MV_115V SGT Gen.1_0715
      File format pdf

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 115 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C
TC=100°C
ID 91.4
57.8
A
Pulsed Drain Current TC=25°C IDM 365 A
Power Dissipation TC=25°C
TC=100°C
PD 125
50
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C
Thermal Resistance
- Junction to Ambient
RθJA 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 115 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1.2 1.7 2.5 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=20A - 6.1 7.6
Drain-Source On-State Resistance RDS(on) VGS=4.5V, ID=10A - 8.4 11
Zero Gate Voltae Drain Current IDSS VDS=115V,GS=0V - - 100 μA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd

VDS=60V,ID=50A,VGS=10V
-
-
-
77
15.9
16.9
105
-
-

nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss

VDS=60V,VGS=0V,f=1.0kHZ
--
-
-
4740
338
36
-
-
-

pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
td(on)
tr
td(off)
tf

VDD=60V,ID=50A,VGS=10V,RG=6Ω
-
-
-
-
34
111
116
119
-
-
-
-

ns
Drain-Source Diode
Diode Forward Voltage VSD IS=1A,VGS=0V - 0.68 1 V
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