MOSFET總覽
PSMQC120N06LS1
PSMQC120N06LS1 is 60V N-Channel enhancement mode MOSFET, optimized to minimize on-state resistance with a best-in-class soft body diode. Designed with logical level gate drive in a DFN5060X-8L package, it is ideal for applications such as SR solutions of PD charger, BMS and BLDC motor driver switch. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
DFN5060X-8L
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Voltage
60V
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Current
39A
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Transistor Polarity
N-Channel
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Applications
● SR solutions of PD Charger
● BLDC motor driver switch
● BMS
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Features
● RDS(ON), VGS@10V, ID@20A<12mΩ
● RDS(ON), VGS@4.5V, ID@10A<16mΩ
● High switching speed
● Low reverse transfer capacitance
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | TC=25°C TC=100°C |
ID | 39 25 |
A |
| Pulsed Drain Current | TC=25°C | IDM | 156 | A |
| Power Dissipation | TC=25°C TC=100°C |
PD | 33 13 |
W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Thermal Resistance - Junction to Ambient |
RθJA | 50 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 1.2 | 1.8 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=20A | - | 9 | 12 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=10A | - | 14 | 16 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | ±100 | nA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=30V,ID=20A,VGS=4.5V | - | 8.3 | - | nC |
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=30V,ID=20A,VGS=10V |
- - - |
16 3.2 3.6 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=30V,VGS=0V,f=1.0kHZ |
-- - - |
850 310 23 |
- - - |
pF |
| Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time |
td(on) tr td(off) tf |
VDD=30V,ID=20A,VGS=10V,RG=2Ω |
- - - - |
21 88 42 92 |
- - - - |
ns |
| Drain-Source Diode | ||||||
| Diode Forward Voltage | VSD | IS=1A,VGS=0V | - | - | 1.1 | V |