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中壓MOSFET (60 - 200V , Rds(on) < 1Ω)

PSMQC120N06LS1

  • Package

    DFN5060X-8L

  • Voltage

    60V

  • Current

    39A

  • Transistor Polarity

    N-Channel

  • Applications

    ● SR solutions of PD Charger
    ● BLDC motor driver switch
    ● BMS

  • Features

    ● RDS(ON), VGS@10V, ID@20A<12mΩ
    ● RDS(ON), VGS@4.5V, ID@10A<16mΩ
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C
TC=100°C
ID 39
25
A
Pulsed Drain Current TC=25°C IDM 156 A
Power Dissipation TC=25°C
TC=100°C
PD 33
13
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C
Thermal Resistance
- Junction to Ambient
RθJA 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 60 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1.2 1.8 2.5 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=20A - 9 12
Drain-Source On-State Resistance RDS(on) VGS=4.5V, ID=10A - 14 16
Zero Gate Voltae Drain Current IDSS VDS=48V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - ±100 nA
Dynamic
Total Gate Charge Qg VDS=30V,ID=20A,VGS=4.5V - 8.3 - nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd

VDS=30V,ID=20A,VGS=10V
-
-
-
16
3.2
3.6
-
-
-

nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss

VDS=30V,VGS=0V,f=1.0kHZ
--
-
-
850
310
23
-
-
-

pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
td(on)
tr
td(off)
tf

VDD=30V,ID=20A,VGS=10V,RG=2Ω
-
-
-
-
21
88
42
92
-
-
-
-

ns
Drain-Source Diode
Diode Forward Voltage VSD IS=1A,VGS=0V - - 1.1 V
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