MOSFET Overview
2N7002K
The 2N7002K 60 V N-Channel Enhancement Mode MOSFET utilizes advanced trench process technology with a current rating of 300 mA in an SOT-23 package. It features a high-density cell design for ultra-low on-resistance and ESD protection, making it ideally suitable for low-voltage, low-current and high switching applications in battery operated systems, solid state relays drivers, displays, and memories, Additionally, the product is green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.
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Package
SOT-23
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Transistor Polarity
N-Channel
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Number of Channels
1
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VDS
60 V
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Features
• RDS(ON), VGS@10 V, ID@500 mA<3 Ω
• RDS(ON), VGS@4.5 V, ID@200 mA<4 Ω
• Advanced trench process technology
• High density cell design for ultra low on-resistance
• Very low leakage current in off condition
• Designed for battery operated systems, solid-state relays drivers, etc
• ESD protected 2 KV HBM
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
Maximum RATINGS and Thermal Characteristics (TA=25°C unless otherwise noted )
| PARAMETER | Symbol | Limit | Units | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 300 | mA | |
| Pulsed Drain Current | IDM | 2000 | mA | |
| Maximum Power Dissipation | TA =25°C Derate above 25°C |
PD | 500 4 |
mW mW/°C |
| Operating Junction and Storage Temperature Range | TJ1 TSTG | -55~150 | °C | |
| Junction-to Ambient Thermal Resistance | RθJA | 250 | °C/W |
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted )
| Parameter | Symbol | Test Conditon | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0 V, ID=10 μA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 μA | 1 | - | 2.5 | V |
| Drain-Souce On-State Resistance | RDS(ON) | VGS=10 V, ID=500 mA VGS=4.5V, ID=200 mA |
- - |
- - |
3 4 |
Ω |
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | - | - | 1 | uA |
| Gate-Source Leakage Current | IDSS | VGS=±20 V, VDS=0 V | - | - | ±10 | uA |
| Forward Transconductance | grs | VDS=15 V, ID=250 mA | 100 | - | - | mS |
| Dynamic | ||||||
| Total Gate Charge Gate-Source Charge Gate-Drain Charge |
Qg Qgs Qgd |
VDS=15 V, ID=250 mA, VGS=5 V |
- - - |
0.8 0.35 0.2 |
- - - |
nC |
| Input Capacitance Output Capacitance Reverse Transfer Capacitance |
Ciss Coss Crss |
VDS=25 V, VGS=0 V, f=1 MHZ |
- - - |
35 13 8 |
- - - |
pF |
| Turn-Off Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |
td(on) tr td(off) tf |
VDD=30V, ID=200 mA, VGS=10 V, RG=10 Ω |
- - - - |
2.7 19 15 23 |
- - - - |
ns |
| Diode Forward Voltage | VSD | IS=200 mA, VGS=0 V | - | 0.82 | 1.3 | V |