Solutions

LEDs are gradually replacing traditional light bulbs as a common technology for automotive lighting. Their inherent power efficiency, increased lifetime, and outstanding design flexibility benefit automotive OEMs in designing unique exterior lighting design. In addition, the high lumen and excellent light beam control ability of LEDs ensures safe driving, contributing to the popularity of Adaptive Front Lighting System (AFS) in the market.

Adaptive Front Lighting System (AFS) uses sensors, motors, and a LED matrix to adjust the direction and intensity of the light beam, while the LED rear light only uses a LED matrix to adjust the intensity of the light beam. PANJIT's solutions include MOSFETs for switching of the DC-DC converter, ESD protection components for the communication interface, Load Dump TVS for power line protection, and H-type Schottky which are suitable to operate at high temperatures up to 175℃. We can also provide excellent power discretes for different numbers of LED strings.

System Block Diagram

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PJD60P04E-AU

-61 A, -40 V, P Channel, 11.3 mΩ
TO-252AA
AEC-Q101
PJD95P04E-AU

-108 A, -40 V, P Channel, 6 mΩ
TO-252AA
AEC-Q101
PJQ5451E-AU

-67 A, -40 V, P Channel, 9.4 mΩ
DFN5060-8L
AEC-Q101
PJQ5449E-AU

-100 A, -40 V, P Channel, 6 mΩ
DFN5060-8L
AEC-Q101
PJQ5548V-AU

45 A, 40 V, N Channel, 10 mΩ
DFN5060-8L
AEC-Q101
PJQ5548-AU

48 A, 40 V, N Channel, 8.8 mΩ
DFN5060-8L
AEC-Q101
PJQ5568A-AU

40 A, 60 V, N Channel, 13.5 mΩ
DFN5060-8L
AEC-Q101
PJQ5968A-AU

36 A, 60 V, N/N Channel, 14 mΩ
DFN5060B-8L
AEC-Q101
PJA3460-AU

2.5 A, 60 V, N Channel, 75 mΩ
SOT-23
AEC-Q101
PJQ5576A-AU

40 A, 100 V, N Channel, 17 mΩ
DFN5060-8L
AEC-Q101
PJQ5528-AU

61A, 30V, N Channel, 6mΩ
DFN5060-8L
AEC-Q101
PJW4N06A-AU

4A, 60V, N Channel, 110mΩ
SOT-223
AEC-Q101
PJW5N06A-AU

5A, 60V, N Channel, 90mΩ
SOT-223
AEC-Q101
PJD50N04-AU

50A, 40V, N Channel, 14mΩ
TO-252AA
AEC-Q101
PJD11N06A-AU

11A, 60V, N Channel, 90mΩ
TO-252AA
AEC-Q101
PJD16N06A-AU

16A, 60V, N Channel, 60mΩ
TO-252AA
AEC-Q101
PJD25N06A-AU

25A, 60V, N Channel, 40mΩ
TO-252AA
AEC-Q101
PJQ5540V-AU

174A, 40V, N Channel, 2.7mΩ
DFN5060X-8L
AEC-Q101
PJQ5446-AU

70A, 40V, N Channel, 14mΩ
DFN5060-8L
AEC-Q101
PJQ5468A-AU

25A, 60V, N Channel, 40mΩ
DFN5060-8L
AEC-Q101
PJQ4446P-AU

48A, 40V, N Channel, 13mΩ
DFN3333-8L
AEC-Q101
PJQ4442P-AU

50A, 40V, N Channel, 10.5mΩ
DFN3333-8L
AEC-Q101
PJQ4460AP-AU

11A, 60V, N Channel, 88mΩ
DFN3333-8L
AEC-Q101
PJQ4468AP-AU

18A, 60V, N Channel, 40mΩ
DFN3333-8L
AEC-Q101
PJD50N04V-AU

80A, 40V, N Channel, 5.9mΩ
TO-252AA
AEC-Q101
PJD55N04V-AU

128A, 40V, N Channel, 3.6mΩ
TO-252AA
AEC-Q101
PJQ5522-AU

141A, 30V, N Channel, 2mΩ
DFN5060-8L
AEC-Q101
PJQ4576AP-AU

35A, 100V, N Channel, 17mΩ
DFN3333-8L
AEC-Q101

PJD60P04E-AU

-61 A, -40 V, P Channel, 11.3 mΩ
TO-252AA
AEC-Q101
PJD95P04E-AU

-108 A, -40 V, P Channel, 6 mΩ
TO-252AA
AEC-Q101
PJQ5451E-AU

-67 A, -40 V, P Channel, 9.4 mΩ
DFN5060-8L
AEC-Q101
PJQ5449E-AU

-100 A, -40 V, P Channel, 6 mΩ
DFN5060-8L
AEC-Q101
PJQ5548V-AU

45 A, 40 V, N Channel, 10 mΩ
DFN5060-8L
AEC-Q101
PJQ5548-AU

48 A, 40 V, N Channel, 8.8 mΩ
DFN5060-8L
AEC-Q101
PJQ5568A-AU

40 A, 60 V, N Channel, 13.5 mΩ
DFN5060-8L
AEC-Q101
PJQ5968A-AU

36 A, 60 V, N/N Channel, 14 mΩ
DFN5060B-8L
AEC-Q101
PJA3460-AU

2.5 A, 60 V, N Channel, 75 mΩ
SOT-23
AEC-Q101
PJQ5576A-AU

40 A, 100 V, N Channel, 17 mΩ
DFN5060-8L
AEC-Q101
PJW4N06A-AU

• Advanced Trench Process Technology • High density cell design for ultra low on-resistance • AEC-Q101 qualified
PJW5N06A-AU

• Advanced Trench Process Technology • High density cell design for ultra low on-resistance • AEC-Q101 qualified
PJD50N04-AU

• High switching speed • Improved dv/dt capability • Low Gate Charge • Low reverse transfer capacitance • AEC-Q101 qualified
PJD11N06A-AU

• High switching speed • Improved dv/dt capability • Low Gate Charge • Low reverse transfer capacitance • AEC-Q101 qualified
PJD16N06A-AU

• High switching speed • Improved dv/dt capability • Low reverse transfer capacitance • AEC-Q101 qualified
PJD25N06A-AU

• High switching speed • Improved dv/dt capability • Low reverse transfer capacitance • AEC-Q101 qualified
PJQ5540V-AU

174A, 40V, N Channel, 2.7mΩ
DFN5060X-8L
AEC-Q101
PJQ5446-AU

• High switching speed • Improved dv/dt capability • Low reverse transfer capacitance • AEC-Q101 qualified
PJQ5468A-AU

• High switching speed • Improved dv/dt capability • Low reverse transfer capacitance • AEC-Q101 qualified
PJQ4446P-AU

• Advanced Trench Process Technology • High density cell design for ultralow on-resistance • AEC-Q101 qualified
PJQ4442P-AU

• Advanced Trench Process Technology • High density cell design for ultralow on-resistance • AEC-Q101 qualified
PJQ4460AP-AU

• Advanced Trench Process Technology • High density cell design for ultra low on-resistance • AEC-Q101 qualified
PJQ4466AP-AU

• High switching speed • Improved dv/dt capability • Low reverse transfer capacitance • AEC-Q101 qualified
PJD50N04V-AU

80A, 40V, N Channel, 5.9mΩ
TO-252AA
AEC-Q101
PJD55N04V-AU

128A, 40V, N Channel, 3.6mΩ
TO-252AA
AEC-Q101
PJQ5528-AU

61A, 30V, N Channel, 6mΩ
DFN5060-8L
AEC-Q101
PJQ5522-AU

141A, 30V, N Channel, 2mΩ
DFN5060-8L
AEC-Q101
PJQ4576AP-AU

35A, 100V, N Channel, 17mΩ
DFN3333-8L
AEC-Q101