SiC Diodes (VRRM = 650 - 1200V, IF = 2 - 40A)
PCDP1665GB
Active
The PCDP1665GB 650 V Silicon Carbide (SiC) Schottky Barrier Diode is designed for high-performance power electronic applications. This product is low Vf series with competitive Vf1.3 V at rated current and target applications are various types of power supplies.
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Package
TO-220AC
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VRRM
650 V
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IF
16 A
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VF(Typ.)
1.3 V
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QC
58 nC
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Features
• Temperature Independent Switching Behavior
• High Surge Current Capability
• Competitive VF 1.3 V at rated current
• Low Conduction Loss
• Zero Reverse Recovery
• High junction temperature 175°C
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard
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Application
Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | |
| DC Blocking Voltage | TC= 155°C | VDC | 650 | V |
| Continuous Forward Current | IF | 16 | A | |
| Repetitive Peak Surge CurrentHalf Sine Wave, D=0.1 | TC=25°C, tp=10 ms TC=125°C, tp=10 ms |
IFRM | 76 60 |
A |
| Peak Forward Surge Currenttp=10 us, Pulse | IFRM | 904 | A | |
| Maximum Power Dissipation | Ptotal | 207.5 | W | |
| Operating Junction Temperature Range | TJ | -55~175 | °C | |
| Storage Temperature Range | TSTG | -55~175 | °C |
Electrical Characteristics (TC = 25 °C unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITION | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|
| Forward Voltage Drop | VF | IF=16 A, TJ=25°C IF=16 A, TJ=175°C |
1.3 1.43 |
1.6 - |
V |
| Reverse Leakage Current | IR | VR=650 V, TJ=25°C VR=650 V, TJ=175°C |
1.3 1.43 |
60 - |
μA |
| Total Capacitive Charge | QC | VR=400 V | 58 | - | nC |
Total Capacitance |
C |
VR=1 V, f=100 kHz VR=200 V, f=100 kHz VR=400 V, f=100 kHz |
955 116 87 |
- - - |
pF |
| Capacitance Stored Energy | EC | VR=400 V | 955 116 87 |
- | μJ |
| Thermal Resistance | RθJC | 0.72 | - | °C/W |