PJL9580

Name: 強茂股份有限公司
Address: 岡山北路24號 No.24, Gangshan N. Rd., 高雄市 Kaohsiung City, 岡山區 Gangshan Dist., 82063, 台灣 Taiwan
Telephone: 886-7-621-3121
Price range: -

PJL9580 is a 150V N-Channel Enhancement Mode MOSFET, optimized to have excellent FOM. Designed with standard level gate drive in a SOP-8 Package. The product features green molding compound compliant with the IEC 61249 standard and EU RoHS 2.0.

Package

SOP-8
Voltage

150V
Current

9A
Transistor Polarity

N-Channel

Features

● R_DS(ON), V_GS@10V,I_D@9A<54mΩ
● R_DS(ON), V_GS@7V,I_D@5A<59mΩ
● Excellent FOM
● Standard Level Drive
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard

Data Sheet Buy Online

CAD Models

Maximum Ratings and Thermal Characteristics (T_A = 25°C unless otherwise noted)

PARAMETER		SYMBOL	LIMIT	UNITS
Drain-Source Voltage		V_DS	150	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current	T_C=25°C T_C=100°C	I_D	9 5.6	A
Pulsed Drain Current	T_C=25°C	I_DM	36	A
Power Dissipation	T_C=25°C T_C=100°C	P_D	10.4 4.2	W
Operating Junction and Storage Temperature Range		T_J, T_STG	-55~150	°C
Thermal Resistance	Junction to Case Junction to Ambient	R_θJC R_θJA	12 60	°C/W

Electrical Characteristics (T_A = 25°C unless otherwise noted)

PARAMETER	SYMBOL	TEST CONDITION	MIN.	TYP.	MAX.	UNITS
Static Characteristics
Drain-Source Breakdown Voltage	BV_DSS	V_GS=0V, I_D=250uA	150	-	-	V
Gate Threshold Voltage	V_GS(th)	V_DS=V_GS, I_D=250uA	2	3	4	V
Drain-Source On-State Resistance	R_DS(on)	V_GS=10V,I_D=9A V_GS=7V, I_D=5A	- -	43 45	54 59	mΩ
Zero Gate Voltae Drain Current	I_DSS	V_DS=150V, V_GS=0V	-	-	1	uA
Gate-Source Leakage Current	I_GSS	V_GS=±20V, V_DS=0V	-	-	±100	nA
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge	Q_g Q_gs Q_gd	V_DS=75V,I_D=9A,V_GS=10V	- - -	22 7 6	29 - -	nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance	Ciss Coss Crss	V_DS=75V,V_GS=0V,f=1MHz	- - -	1116 81 23	1450 142 -	pF
Gate resistance	R_g	f=1MHz	-	0.8	-	Ω
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time	td_(on) tr td_(off) tf	V_DS=75V,I_D=9A,V_GS=10V,R_G=3Ω	- - - -	8.4 14 17 11	- - - -	ns
Drain-Source Diode
Diode Forward Voltage	V_SD	I_S=10A,V_GS=0V	-	0.9	1.3	V

PJL9580

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Maximum Ratings and Thermal Characteristics (T_A = 25°C unless otherwise noted)

Electrical Characteristics (T_A = 25°C unless otherwise noted)