MOSFET Overview
PJQ1820U-20V
PJQ1820U-20V is a 20V Dual N-Channel Enhancement Mode applied with advanced trench technology MOSFET. Its low resistance performance with ESD protected and small size package by DFN1010B-6L make it ideal for switch load applications.
-
Package
DFN1010B-6L
-
Voltage
20V
-
Current
1A
-
Transistor Polarity
N-Channel
-
Features
● Advanced Trench Process Technology
● ESD Protected
● Low Gate Charge
● Fast Switching
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±8 | V | |
| Continuous Drain Current (Note 4) | ID | 1 | A | |
| Pulsed Drain Current | IDM | 2.0 | A | |
| Power Dissipation | TA=25°C | PD | 400 | mW |
| Power Dissipation | Derate above 25°C | PD | 3.2 | mW/°C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Typical Thermal Resistance - Junction to Ambient |
RθJA | 312 | °C/W |