MOSFET Overview
PJQ5540V-AU
PJQ5540V-AU is an automotive-grade 40V N-Channel standard level MOSFET with advanced trench technology, assembled in a DFN5060X-8L package. With low Qg (total gate charge) and low RDS(on) , the conduction losses and switching losses are efficiently minimized. Additionally, its high operating junction temperature of 175 °C and compact packaging make PJQ5540V-AU ideal for PCB layouts with limited space as well as thermally demanding applications.
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Package
DFN5060X-8L
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Voltage
40V
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Current
174A
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Transistor Polarity
N-Channel
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Applications
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Features
● AEC-Q101 qualified
● Low RDS(ON): VGS@10V, ID@20A<2.1mΩ / VGS@7V, ID@20A<2.7mΩ
● Excellent FOM to minimize driver losses
● High operating junction temperature of 175 °C
● Lead-free in compliance with EU RoHS 2.0 standard
● Halogen-free in compliance with IEC 61249 standard
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (Note 4) | ID | 174 | A | |
| Pulsed Drain Current | IDM | 609 | A | |
| Power Dissipation | TA=25°C | PD | 115.4 | W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~175 | °C | |
| Typical Thermal Resistance - Junction to Ambient |
RθJA | 45 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | - | - | V |
| Gate Threshold Voltage | VGS(th> | VDS=VGS, ID=50uA | 2 | 2.9 | 3.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=20A | - | 1.7 | 2.1 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS=7V, ID=20A | - | 2.1 | 2.7 | mΩ |
| Zero Gate Voltae Drain Current | IDSS | VDS=40V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | uA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=32V ID=20A VGS=10V |
- | 63 | - | nC |
| Gate-Source Charge | Qgs | VDS=32V ID=20A VGS=10V |
- | 19 | - | nC |
| Gate-Drain Charge | Qgd | VDS=32V ID=20A VGS=10V |
- | 11 | - | nC |
| Input Capacitance | Ciss | VDS=25V VGS=0V f=1MHZ |
- | 4690 | - | pF |
| Output Capacitance | Coss | VDS=25V VGS=0V f=1MHZ |
- | 979 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V VGS=0V f=1MHZ |
- | 68 | - | pF |
| Turn-On Delay Time | td(on) | VDS=32V ID=20A VGS=10V RG=3Ω |
- | 30 | - | ns |
| Turn-On Rise Time | tr | VDS=32V ID=20A VGS=10V RG=3Ω |
- | 34 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=32V ID=20A VGS=10V RG=3Ω |
- | 55 | - | ns |
| Turn-Off Fall Time | tf | VDS=32V ID=20A VGS=10V RG=3Ω |
- | 17 | - | ns |
| Drain-Source Diode | ||||||
| Diode Forward Current | IS | --- | - | - | 174 | A |
| Diode Forward Voltage | VSD | IS=20A VGS=0V |
- | 0.8 | 1.3 | V |