PSMD099N10LS2

Name: 強茂股份有限公司
Address: 岡山北路24號 No.24, Gangshan N. Rd., 高雄市 Kaohsiung City, 岡山區 Gangshan Dist., 82063, 台灣 Taiwan
Telephone: 886-7-621-3121
Price range: -

New Product

Package

TO-252AA
Voltage

100 V
Current

58 A
Transistor Polarity

N-Channel

Features

• R_DS(ON)<9.9 mΩ at V_GS=10 V, I_D=32 A
• R_DS(ON)<14 mΩ at V_GS=4.5 V, I_D=16 A
• High switching speed
• Low reverse transfer capacitance
• Lead free in compliance with EU RoHS 2.0
• Green molding compound as per IEC 61249 standard

Application

• Consumer Electronics
• Power Supply Unit (Monitor & TV)

Data Sheet STEP File Buy Online

CAD Models Sample Request

Absolute Maximum Ratings (T_A = 25 °C unless otherwise specified)

PARAMETER		SYMBOL	LIMIT	UNITS
Drain-Source Voltage		V_DS	100	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current	T_C=25°C T_C=100°C	I_D	58 41	A
Pulsed Drain Current	T_C=25°C	I_DM	232	A
Power Dissipation	T_C=25°C T_C=100°C	P_D	79 39	W
Operating Junction and Storage Temperature Range		T_J, T_STG	-55~175	°C
Thermal Resistance - Junction to Ambient		R_θJA	50	°C/W

Electrical Characteristics (T_A = 25 °C unless otherwise specified)

PARAMETER	SYMBOL	TEST CONDITION	MIN.	TYP.	MAX.	UNITS
Static Characteristics
Drain-Source Breakdown Voltage	BV_DSS	V_GS=0 V, I_D=250 μA	100	-	-	V
Gate Threshold Voltage	V_GS(th)	V_DS=V_GS, I_D=105 μA	1.1	1.7	2.3	V
Drain-Source On-State Resistance	R_DS(on)	V_GS=10 V, I_D=32 A V_GS=4.5 V, I_D=16 A	- -	8.5 10.6	9.9 14	mΩ
Zero Gate Voltage Drain Current	I_DSS	V_DS=100 V, V_GS=0 V	-	-	1	μA
Gate-Source Leakage Current	I_GSS	V_GS=±20 V, V_DS=0 V	-	-	±100	nA
Transfer characteristics	g_fs	V_DS=10 V, I_D=32 A	-	67	-	S
Dynamic Characteristics
Total Gate Charg	Q_g	V_DS=50 V, I_D=32 A, V_GS=4.5 V	-	12	-	nC
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Plateau Voltage	Q_g Q_gs Q_gd V_plateau	V_DS=50 V, I_D=32 A, V_GS=10 V	- - - -	25 5.8 2.8 3	33 - - -	nC V
Input Capacitance Output Capacitance Reverse Transfer Capacitance	Ciss Coss Crss	V_DS=50 V, V_GS=0 V, f=250 kHz	- - -	1630 480 6	2120 630 -	pF
Gate resistance	R_g	f=1 MHz	-	0.75	1.5	Ω
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time	t_d(on) t_r t_d(off) t_f	V_DD=50 V, I_D=32 A, V_GS=10 V,R_G=3 Ω	- - - -	6.7 2.4 14.6 2.8	- - - -	ns
Drain-Source Diode
Diode Forward Voltage	V_SD	I_S=32 A, V_GS=0 V	-	0.9	1.2	V

PSMD099N10LS2

Absolute Maximum Ratings (TA = 25 °C unless otherwise specified)

Electrical Characteristics (TA = 25 °C unless otherwise specified)

Absolute Maximum Ratings (T_A = 25 °C unless otherwise specified)

Electrical Characteristics (T_A = 25 °C unless otherwise specified)