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Medium Voltage MOSFETs (60 - 200V, Rds(on) < 1Ω)

PSMQC094N10NS2

New Product

  • Package

    DFN5060-8L

  • Voltage

    100V

  • Current

    61A

  • Transistor Polarity

    N-Channel

  • Applications

    ● PD Charger
    ● Adapter
    ● Home Appliance

  • Features

    ● RDS(ON)< 9.4 mΩ at VGS=10V, ID =30A
    ● RDS(ON)< 15.6 mΩ at VGS=6V, ID =15A
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard
    ● 100% UIS / Rg test in mass production

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C ID 61 A
Continuous Drain Current TC=100°C ID 43 A
Pulsed Drain Current TC=25°C IDM 244 A
Power Dissipation TC=25°C PD 75 W
Power Dissipation TC=100°C PD 37.5 W
Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C
Thermal Resistance
- Junction to Ambient
RθJA 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 100 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=115uA 1.8 2.8 3.8 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=30A - 8.4 9.4
Drain-Source On-State Resistance RDS(on) VGS=6V, ID=15A - 11 15.6
Zero Gate Voltae Drain Current IDSS VDS=100V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 uA
Dynamic
Total Gate Charge Qg VDS=50V
ID=30A
VGS=10V
- 19 25 nC
Gate-Source Charge Qgs VDS=50V
ID=30A
VGS=10V
- 7.6 - nC
Gate-Drain Charge Qgd VDS=50V
ID=30A
VGS=10V
- 3.0 - nC
Input Capacitance Ciss VDS=50V
VGS=0V
f=250kHZ
- 1370 1780 pF
Output Capacitance Coss VDS=50V
VGS=0V
f=250kHZ
- 460 600 pF
Reverse Transfer Capacitance Crss VDS=50V
VGS=0V
f=250kHZ
- 10 - pF
Turn-On Delay Time td(on) VDD=50V
ID=30A
VGS=10V
RG=3.0Ω
- 6.2 - ns
Rise Time tr VDD=50V
ID=30A
VGS=10V
RG=3.0Ω
- 3.3 - ns
Turn-Off Delay Time td(off) VDD=50V
ID=30A
VGS=10V
RG=3.0Ω
- 10.4 - ns
Fall Time tf VDD=50V
ID=30A
VGS=10V
RG=3.0Ω
- 3.3 - ns
Drain-Source Diode
Diode Forward Voltage VSD IS=30A
VGS=0V
- 0.9 1.2 V
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