返回

中壓MOSFET (60 - 200V , Rds(on) < 1Ω)

PSMD460N15NS1

  • Package

    TO-252AA

  • Voltage

    150V

  • Current

    22A

  • Transistor Polarity

    N-Channel

  • Applications

    ● SR solutions of PD Charger
    ● BLDC motor driver switch
    ● BMS

  • Features

    ● RDS(ON), VGS@10V, ID@20A<46mΩ
    ● RDS(ON), VGS@7V, ID@10A<60mΩ
    ● High switching speed
    ● Low reverse transfer capacitance
    ● Lead free in compliance with EU RoHS 2.0
    ● Green molding compound as per IEC 61249 standard

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNITS
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current TC=25°C
TC=100°C
ID 22
14
A
Pulsed Drain Current TC=25°C IDM 88 A
Power Dissipation TC=25°C
TC=100°C
PD 48
19
W
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C
Thermal Resistance
- Junction to Ambient
RθJA 55 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 150 - - V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1.2 2.3 3.2 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=20A - 40.8 46
Drain-Source On-State Resistance RDS(on) VGS=7V, ID=10A - 41.2 60
Zero Gate Voltae Drain Current IDSS VDS=120V, VGS=0V - - 1 μA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - ±100 nA
Dynamic
Total Gate Charge Qg VDS=75V,ID=20A,VGS=7V - 15 - nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd

VDS=75V,ID=20A,VGS=10V
-
-
-
20
5.2
3.8
-
-
-

nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss

VDS=75V,VGS=0V,f=1.0kHZ
--
-
-
1315
127
23
-
-
-

pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
td(on)
tr
td(off)
tf

VDD=75V,ID=20A,VGS=10V,RG=2Ω
-
-
-
-
25
53
56
42
-
-
-
-

ns
Drain-Source Diode
Diode Forward Voltage VSD IS=20A,VGS=0V - 1 1.3 V
新增詢問清單?

您確定您要新增此品項至詢問清單中?