MOSFET Overview
PJC138K
PJC138K is a 50 V MOSFET embedded with 2 KV ESD that offers superior switching performance. This product is suited for applications with low voltages and high switching demands.
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Package
SOT-323
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Voltage
50 V
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Current
360 mA
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Transistor Polarity
N-Channel
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Number of Channels
1 Channel
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Features
• Advanced Trench Process Technology
• Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc.
• EDS Protected 2 KV HBM
• Lead free in compliance with EU RoHS2.0 2011/65/EU & 2015/865/EU directive
• Green molding compound as per IEC61249 Std.
(Halogen Free)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNITS | |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 50 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 360 | mA | |
| Pulsed Drain Current | IDM | 1200 | mA | |
| Power Dissipation | TA=25°C | PD | 236 | mW |
| Power Dissipation | Derate above 25°C | PD | 1.89 | mW/°C |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55~150 | °C | |
| Typical Thermal Resistance - Junction to Ambient(Note 3) |
RθJA | 530 | °C/W |
Electrical Characteristics (TA = 25°C unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITION | MIN. | TYP. | MAX. | UNITS |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 50 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.8 | 1.0 | 1.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=500mA | - | 0.96 | 1.6 | Ω |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=200mA | - | 1.25 | 2.5 | Ω |
| Drain-Source On-State Resistance | RDS(on) | VGS=2.5V, ID=100mA | - | 2.73 | 4.5 | Ω |
| Zero Gate Voltage Drain Current | IDSS | VGS=50V, VGS=0V | - | 0.01 | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | ±3.0 | ±10 | uA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=25V ID=250mA VGS=4.5V (Note 1,2) |
- | 0.63 | 1 | nC |
| Gate-Source Charge | Qgs | VDS=25V ID=250mA VGS=4.5V (Note 1,2) |
- | 0.2 | - | nC |
| Gate-Drain Charge | Qgd | VDS=25V ID=250mA VGS=4.5V (Note 1,2) |
- | 0.23 | - | nC |
| Input Capactiance | Ciss | VDS=25V VGS=0V f=1.0MHZ |
- | 25 | 50 | pF |
| Output Capactiance | Coss | VDS=25V VGS=0V f=1.0MHZ |
- | 9.5 | 20 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V VGS=0V f=1.0MHZ |
- | 2.1 | 5 | pF |
| Switching | ||||||
| Turn-On Delay Time | td(on) | VDD=25V ID=500mA VGS=10V RG=6Ω (Note 1,2) |
- | 2.2 | 5 | ns |
| Turn-On Rise Time | tr | VDD=25V ID=500mA VGS=10V RG=6Ω (Note 1,2) |
- | 19.2 | 38 | ns |
| Turn-Off Delay Time | td(off) | VDD=25V ID=500mA VGS=10V RG=6Ω (Note 1,2) |
- | 6.2 | 12 | ns |
| Turn-Off Fall Time | tf | VDD=25V ID=500mA VGS=10V RG=6Ω (Note 1,2) |
- | 23 | 50 | ns |
| Drain-Source Diode | ||||||
| Maximum Continuous Drain-Source Diode Forward Current |
IS | --- | - | - | 500 | mA |
| Diode Forward Voltage | VSD | IS=500mA, VGS=0V | - | 0.86 | 1.5 | V |